Apparatus for fabricating a III-V nitride film and a method for fabricating the same
US7033439B2 · kind B2 · utility
14Cited by
13References
4Claims
0Family size
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Key dates
| Filing date | Aug 13, 2001 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Nov 21, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III–V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method.The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.