Trench gate laterally diffused MOSFET devices and methods for making such devices
US7033891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2002 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Dec 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A MOSFET device for RF applications that uses a trench gate in place of the lateral gate used in lateral MOSFET devices is described. The trench gate in the devices of the invention is provided with a single, short channel for high frequency gain. The device of the invention is also provided with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Such features allow these devices to maintain the advantages of the LDMOS structure (better linearity), thereby increasing the RF power gain. The trench gate LDMOS of the invention also reduces the hot carrier effects when compared to regular LDMOS devices by reducing the peak electric field and impact ionization. Thus, the devices of the invention will have a better breakdown capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.