Patent · US Expired

Photoemission electron microscopy and measuring method using the microscopy

US7034295B2 · kind B2 · utility

1Cited by
2References
9Claims
0Family size

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Key dates

Filing dateSep 10, 2004
Grant dateApr 25, 2006
Priority date
Expiry dateSep 10, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/2482
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A photoemission electron microscopy having a light source system for carrying out a high-resolution measurement such as work function distribution measurement or magnetic domain distribution with reliability, and a high-sensitivity measurement method using the photoemission electron microscopy. A photoemission electron microscopy having an excitation light source system in which a specimen is irradiated with irradiation light from a light source uses a vacuum chamber in which the specimen is placed and an objective lens which collects the irradiation light on a specimen surface. The objective lens is accommodated in the vacuum chamber. The light source may be placed outside the vacuum chamber. A condenser lens which makes the irradiation light from the light source generally parallel may be placed between the light source and the vacuum chamber. A transmission window which transmits the irradiation light while the vacuum chamber is sealed may be placed between the condenser lens and the objective lens. If a diffraction grating for selecting the wavelength of the irradiation light or a polarizing filter for selecting the direction of circularly polarized light in the irradiation lig…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.