Low-dielectric constant structure with a multilayer stack of thin films with pores
US7034380B2 · kind B2 · utility
14Cited by
2References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 12, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Sep 12, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention describes a structure having a multilayer stack of thin films, the thin films being a low-dielectric constant material, the thin films having pores, and a method of forming such a structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.