Method of eliminating photoresist poisoning in damascene applications
US7034409B2 · kind B2 · utility
2Cited by
89References
3Claims
0Family size
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Key dates
| Filing date | Nov 21, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Nov 21, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.