Methods for reducing delamination during chemical mechanical polishing
US7037174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Dec 25, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.