Method for production of a semiconductor component and a semiconductor component produced by said method

US7037438B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Hubert Benzel · Neckartenzlingen, DE
• Heribert Weber · Leverkusen, DE
• Hans Artmann · Magstadt, DE
• Frank Schaefer · Lörrach, DE

Key dates

• Filing date: Apr 20, 2001
• Grant date: May 2, 2006
• Expiry date: Sep 12, 2021

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/0115
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.