Lithographic method of manufacturing a device
US7037626B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2002 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jan 23, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0035
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.