High sensitivity crosslinkable photoresist composition, based on soluble, film forming dendrimeric calix[4] arene compositions method and for use thereof
US7037638B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2000 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jan 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0382
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high sensitivity, organic solvent developable, high resolution photoresist composition for use in E-beam lithography is disclosed. The composition of the present invention comprises a high sensitivity, soluble, film forming photoresist composition of dendrimeric calix [4]arene derivatives and processes for forming lithographic patterns with a crosslinker selected from glycoluril derivatives capable of reacting with these dendrimer under acid catalysis, a photoacid generator and an organic solvent. The composition of the present invention is particularly useful for production of negative tone images of high resolution (less than 100 nanometers).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.