Methods for forming phase changeable memory devices
US7037749B2 · kind B2 · utility
19Cited by
5References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Feb 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.