Phase changeable memory devices having multi-level data storage elements and methods of fabricating the same
US7037762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jan 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase changeable memory device includes a lower interlayer dielectric layer on a semiconductor substrate. A plurality of first phase changeable data storage elements is disposed on the lower interlayer dielectric layer. A middle interlayer dielectric layer covers the first phase changeable data storage elements and the lower interlayer dielectric layer. A plurality of second phase changeable data storage elements is disposed on the middle interlayer dielectric layer. The first and second phase changeable data storage elements are arrayed in rows and columns such that respective first phase changeable data storage elements are disposed between respective adjacent second phase changeable data storage elements in the rows and columns. A plate electrode overlies the first and second phase changeable data storage elements and is electrically connected to the first and second phase changeable data storage elements. Related fabrication methods are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.