Method of forming a transistor using selective epitaxial growth
US7037793B2 · kind B2 · utility
11Cited by
3References
15Claims
0Family size
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Key dates
| Filing date | Feb 9, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jun 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
A method of forming a transistor involves firstly forming at least one gate structure on a semiconductor substrate. Then, a surface cleaning process is performed. In the surface cleaning process, a chemical oxidation method is utilized for forming a first oxide layer on a surface of the semiconductor substrate not covered with the gate structure and the first oxide layer is removed subsequently. Finally, a selective epitaxial growth method is utilized for forming a first epitaxial layer on the surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.