Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects
US7037823B2 · kind B2 · utility
0Cited by
0References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jul 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench and via structure is formed in a low k dielectric layer (100) formed over a silicon substrate (10). Super critical CO2 and a first silylization agent are used to form a chemically bonded high density surface layer (160). Silanol species are removed from the low k dielectric layer (100) using super critical CO2 and a second silylization agent. A barrier layer (190) and copper (200) are used to fill the trench and via structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.