Composition for stripping photoresist and method of preparing the same
US7037852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | May 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composition for stripping photoresist, methods of preparing and forming the same, a method of manufacturing a semiconductor device using the composition, and a method of removing a photoresist pattern from an underlying layer using the composition, where the composition may include an ethoxy N-hydroxyalkyl alkanamide represented by the formula, CH3CH2—O—R3—CO—N—R1R2OH, an alkanolamine and a polar material. Raw materials of alkyl alkoxy alkanoate, represented by a chemical formula of R4—O—R3—COOR5, and alkanolamine, represented by a chemical formula of NHR1R2OH, may be mixed to form a mixture, which is stirred and cooled to obtain the composition. The composition may balance exfoliation and dissolution of photoresist patterns, and may potentially eliminate thread-type residues from remaining on a surface of an underlying layer after removing the photoresist patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.