Semiconductor device suited for a high frequency amplifier
US7038250B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | May 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/136
Abstract
According to the present invention, there is a provided a semiconductor device having, a collector contact layer made of an n-type GaAs layer; a first collector layer formed on the collector contact layer and made of an n-type GaAs layer; a second collector layer formed on the first collector layer and made of a p-type GaAs layer; a third collector layer formed on the second collector layer and made of an n-type InGaP layer; a fourth collector layer formed on the third collector layer and made of an n-type InGaP layer having an impurity concentration higher than that of the third collector layer; a fifth collector layer formed on the fourth collector layer and made of an n-type GaAs layer; a base layer formed on the fifth collector layer and made of a p-type GaAs layer; and an emitter layer formed on the base layer and made of an n-type InGaP layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.