Semiconductor device and method for manufacturing the same
US7038264B2 · kind B2 · utility
0Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2004 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jun 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first interlayer insulation film is formed, on which a SiO2 cap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiO2 cap film is preformed by heat treatment. Then, an Al2O3 film is formed on the SiO2 cap film. Subsequently, heat treatment is performed on the Al2O3 in an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the Al2O3 film, a platinum film, a PLZT film, and an IrO2 film are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.