Deep insulating trench
US7038289B2 · kind B2 · utility
43Cited by
1References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 13, 2002 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Aug 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Deep isolation trenches having sides and a bottom are formed in a semiconductor substrate. The sides and the bottom are coated with an electrically insulating material that delimits an empty cavity, and forms a plug to close the cavity. The sides of the trench are configured with a neck that determines the depth of the plug, and a first portion that tapers outwards from the neck as the distance from the bottom increases. Deep isolation trenches may be applied, in particular, to bipole and BiCMOS circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.