Optical measuring method for semiconductor multiple layer structures and apparatus therefor
US7038768B2 · kind B2 · utility
2Cited by
1References
5Claims
0Family size
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Key dates
| Filing date | Aug 18, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jul 19, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/4735
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a measuring apparatus for a semiconductor multiple layer structure, a spectrometer disperses light from a sample for measurement of the photoluminescence spectrum or disperses probe light to irradiate the sample for the measurement of the reflection spectrum. A controller makes a guide member guide the white light to the spectrometer and acquire electric signals from a first detector for the measurement of the reflection spectrum, and makes the guide member guide the light from the spectrometer to a second detector to acquire electric signals for the measurement of the photoluminescence spectrum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.