Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer
US7038892B2 · kind B2 · utility
9Cited by
4References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jan 30, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.