Method for producing p-type group III nitride compound semiconductor
US7041519B2 · kind B2 · utility
6Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Sep 22, 2003 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.