Patent · US Expired

Three-dimensional island pixel photo-sensor

US7041525B2 · kind B2 · utility

29Cited by
5References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 2, 2004
Grant dateMay 9, 2006
Priority date
Expiry dateMar 5, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/807

Abstract

A method and structure for a photodiode array comprising a plurality of photodiode cores, light sensing sidewalls along an exterior of the cores, logic circuitry above the cores, trenches separating the cores, and a transparent material in the trenches is disclosed. With the invention, the sidewalls are perpendicular to the surface of the photodiode that receives incident light. The light sensing sidewalls comprise a junction region that causes electron transfer when struck with light. The sidewalls comprise four vertical sidewalls around each island core. The logic circuitry blocks light from the core so light is primarily only sensed by the sidewalls.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.