Light-emitting device and method of fabricating the same
US7041529B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 22, 2003 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Dec 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
Abstract
In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.