Isolation structure for trench capacitors and fabrication method thereof
US7041567B2 · kind B2 · utility
2Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2004 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Nov 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method for self-aligned fabricating an isolation structure of a trench capacitor. The method takes two steps to etch the substrate for forming the shallow trench of the isolation structure, wherein the conductive layer and the collar oxide layer of the trench capacitor remain intact during the etching processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.