Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor dies

US7041569B1 · kind B1 · utility

Assignee

• Newport Fab, LLC · US

Inventors

• Arjun Kar-Roy · Irvine, US
• Marco Racanelli · Orange, US
• David J. Howard · Irvine, US

Key dates

• Filing date: Nov 13, 2003
• Grant date: May 9, 2006
• Expiry date: Jun 7, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76838
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to a disclosed embodiment, a composite MIM capacitor comprises a lower electrode of a lower MIM capacitor situated in a lower interconnect metal layer of a semiconductor die. The composite MIM capacitor further comprises an upper electrode of the lower MIM capacitor situated within a lower interlayer dielectric, where the lower interlayer dielectric separates the lower interconnect metal layer from an upper interconnect metal layer. A lower electrode of the upper MIM capacitor is situated in the upper interconnect metal layer. An upper electrode of the upper MIM capacitor is situated within the upper interlayer dielectric which is, in turn, situated over the upper interconnect metal layer. The upper electrode of the lower MIM capacitor is connected to the lower electrode of the upper MIM capacitor while the lower electrode of the lower MIM capacitor is connected to the upper electrode of the upper MIM capacitor.