Systems and methods for forming metal oxides using alcohols
US7041609B2 · kind B2 · utility
576Cited by
19References
40Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 28, 2002 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Jan 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.