Method and apparatus for the thermal treatment of substrates
US7041610B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2000 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | May 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to achieve temperature distribution, in particular a homogeneous temperature distribution in, for example, a substrate during a thermal treatment process of said substrate, a method is disclosed for the thermal treatment of substrates, in particular semi-conductor wafers, in a process chamber comprising at least one temperature distribution influencing element located in the process chamber. During thermal treatment, the spatial arrangement of the element is altered relative to the substrate and/or to the process chamber. A device for the thermal treatment of substrates in a process chamber is also disclosed, comprising at least one temperature distribution influencing element located in a process chamber wherein a device is provided in order to alter the spatial arrangement of the element relative to the substrate and/or to the process chamber during the thermal treatment process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.