Semiconductor device with polymer insulation of some electrodes
US7042053B2 · kind B2 · utility
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3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2003 |
| Grant date | May 9, 2006 |
| Priority date | — |
| Expiry date | Dec 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a principal plane on which gate, source, and drain electrodes are located. A film made of a polymer with a low dielectric constant is over the gate and drain electrodes to insulate the gate and drain electrodes from the source electrodes. A chip surface electrode located over the low-dielectric-constant polymer film and the source electrode, and connected to ground potential. The source electrode is provided with the ground potential through the chip surface electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.