Method and apparatus for manufacturing single crystal
US7045009B2 · kind B2 · utility
4Cited by
2References
17Claims
0Family size
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Inventors
Key dates
| Filing date | Aug 3, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Aug 3, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.