Fusao Hirose
12Patents
6h-index
37Co-inventors
66Inventor score
Filing activity: Jun 7, 1993 → Dec 23, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6214108A | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same | Chemistry; Metallurgy | 34 | Expired |
| US6451112B1 | Method and apparatus for fabricating high quality single crystal | Emerging Cross-Sectional Technologies | 25 | Expired |
| US6786969B2 | Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5449418A | Method of formation of magnetostrictive layer and strain sensor using same | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7135074B2 | Method for manufacturing silicon carbide single crystal from dislocation control seed crystal | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7147714B2 | Manufacturing method of silicon carbide single crystals | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6746787B2 | Manufacturing method of silicon carbide single crystals | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7045009B2 | Method and apparatus for manufacturing single crystal | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7396411B2 | Apparatus for manufacturing single crystal | Emerging Cross-Sectional Technologies | 3 | Expired |
| US9053834B2 | Silicon carbide single crystal and manufacturing method of the same | Chemistry; Metallurgy | 0 | Active |
| US11152472B2 | Crystalline oxide semiconductor | Electricity | 0 | Active |
| US7879150B2 | Silicon carbide manufacturing device and method of manufacturing silicon carbide | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.