Methods of manufacturing ferroelectric capacitors for integrated circuit memory devices
US7045416B2 · kind B2 · utility
0Cited by
28References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 5, 2003 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Jun 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
Methods of forming integrated circuit capacitors having dielectric layers therein that comprise ferroelectric materials, include the use of protective layers to block the infiltration of hydrogen into the ferroelectric material. By blocking the infiltration of hydrogen, the hysteresis characteristics of the ferroelectric materials can be preserved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.