Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor
US7045418B2 · kind B2 · utility
1Cited by
8References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2003 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Jun 9, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device (200), a method of manufacture therefor and an integrated circuit including the same. In one embodiment of the invention, the semiconductor device (200) includes a floating gate (230) located over a semiconductor substrate (210), wherein the floating gate (230) has a metal control gate (250) located thereover. The semiconductor device (200), in the same embodiment, further includes a dielectric layer (240) located between the floating gate 230 and the metal control gate (250), the dielectric layer (240) having a gettering material located therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.