Hybrid charge coupled CMOS image sensor having an amplification transistor controlled by a sense node
US7045754B2 · kind B2 · utility
9Cited by
1References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 30, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Dec 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An active pixel that incorporates elements of CCD technology into a CMOS image sensor is disclosed. Each pixel includes a reset transistor that resets a sense node. The active pixel includes an amplification transistor that is modulated by the signal on the sense node. A light sensing element, such as a photodiode, is provided and its signal is selectively read out by a transfer gate, selectively stored by a memory gate, and finally read out onto the sense node by a control gate. Underneath the memory gate is a memory well that acts as memory for the pixel and stores the signal output by the light sensing element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.