High-voltage diodes formed in advanced power integrated circuit devices
US7045830B1 · kind B1 · utility
12Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2004 |
| Grant date | May 16, 2006 |
| Priority date | — |
| Expiry date | Dec 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
Abstract
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.