Jun Cai
126Patents
11h-index
147Co-inventors
83Inventor score
Filing activity: Nov 5, 1999 → Jun 6, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7968400B2 | Short channel LV, MV, and HV CMOS devices | Electricity | 116 | Active |
| US7977715B2 | LDMOS devices with improved architectures | Electricity | 37 | Active |
| US7205612B2 | Fully silicided NMOS device for electrostatic discharge protection | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6873017B2 | ESD protection for semiconductor products | Electricity | 34 | Expired |
| US7750401B2 | Self-aligned complementary LDMOS | Electricity | 27 | Active |
| US9303872B2 | Fuel injector | Mechanical Engineering; Lighting; Heating | 18 | Active |
| US7355224B2 | High voltage LDMOS | Electricity | 16 | Active |
| US7649225B2 | Asymmetric hetero-doped high-voltage MOSFET (AH2MOS) | Electricity | 14 | Active |
| US7045830B1 | High-voltage diodes formed in advanced power integrated circuit devices | Electricity | 12 | Expired |
| US6310380A | Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers | Electricity | 12 | Expired |
| US8722263B2 | Feedback control of H2 injection during park based on gas concentration model | Emerging Cross-Sectional Technologies | 11 | Active |
| US7180132B2 | Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region | Electricity | 11 | Expired |
| US6507090B1 | Fully silicide cascaded linked electrostatic discharge protection | Electricity | 10 | Expired |
| US7602017B2 | Short channel LV, MV, and HV CMOS devices | Electricity | 10 | Active |
| US9534790B2 | Fuel injector for supplying fuel to a combustor | Mechanical Engineering; Lighting; Heating | 10 | Active |
| US7125777B2 | Asymmetric hetero-doped high-voltage MOSFET (AH2MOS) | Electricity | 9 | Expired |
| US6417541B1 | ESD protection network with field oxide device and bonding pad | Electricity | 9 | Expired |
| US10489629B1 | Under-screen biometric identification apparatus and electronic device | Electricity | 8 | Active |
| US9450056B2 | Lateral DMOS device with dummy gate | Electricity | 8 | Active |
| US7888735B2 | Integrated complementary low voltage RF-LDMOS | Electricity | 7 | Active |
| US8324042B2 | Integrated complementary low voltage RF-LDMOS | Electricity | 6 | Active |
| US7965480B2 | Electrostatic discharge protection circuit | Electricity | 6 | Active |
| US7531888B2 | Integrated latch-up free insulated gate bipolar transistor | Electricity | 6 | Active |
| US6870218B2 | Integrated circuit structure with improved LDMOS design | Electricity | 6 | Expired |
| US6830966B2 | Fully silicided NMOS device for electrostatic discharge protection | Emerging Cross-Sectional Technologies | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.