Method of manufacturing semiconductor device
US7049235B2 · kind B2 · utility
1Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2003 |
| Grant date | May 23, 2006 |
| Priority date | — |
| Expiry date | Dec 2, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device includes a process for forming a photoresist pattern. In the disclosed process, residual photoresist polymers are removed using a photoresist polymer remover composition that includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.