LDMOS transistor

US7049669B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gordon Ma · Phoenix, US
• Qiang Chen · Sollentuna, SE

Key dates

• Filing date: Sep 15, 2003
• Grant date: May 23, 2006
• Expiry date: Sep 15, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0221

Abstract

A semiconductor device comprises an active region of a first conductivity type including a transistor structure, and a ring shaped region of the first conductivity type extending from a surface of the active region into the active region and substantially surrounding the transistor structure.