Slurry and use thereof for polishing
US7052625B2 · kind B2 · utility
7Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Apr 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A slurry containing abrasive particles, an oxidizing agent having a low static etch rate on at least one acid or salt metal, and having a pH of about 5 to about 11 is especially useful for polishing surfaces, including both metal and silicon dioxide, such as present in microelectronics, at the same or substantially the same polishing rates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.