Method for selectively stressing MOSFETs to improve charge carrier mobility
US7052946B2 · kind B2 · utility
37Cited by
2References
36Claims
0Family size
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Key dates
| Filing date | Mar 10, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Apr 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
Abstract
A strained channel MOSFET device with improved charge mobility and method for forming the same, the method including providing a first gate with a first semiconductor conductive type and second gate with a semiconductor conductive type on a substrate; forming a first strained layer with a first type of stress on said first gate; and, forming a second strained layer with a second type of stress on said second gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.