Film or layer made of semi-conductive material and method for producing said film or layer

US7052948B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Brian Murphy · Pfarrkirchen, DE
• Reinhold Wahlich · Burghausen, DE
• Rudiger Schmolke · Burghausen, DE
• Wilfried von Ammon · Burghausen, DE
• James Moreland · Portland, US

Key dates

• Filing date: Jun 27, 2002
• Grant date: May 30, 2006
• Expiry date: Aug 10, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76251
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.