Method for manufacturing semiconductor device, and processing system and semiconductor device
US7052994B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Sep 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device comprises: forming an N region and P region on a substrate, forming wiring so as to connect one or both of these N and P regions; and performing a processing step on a semiconductor substrate on which the upper surface of said wiring is exposed using a liquid, wherein said processing step is performed in a state in which the wavelength of light radiated onto said semiconductor substrate is 500 nm to less than 1 μm, so that problems such as wiring connection defects for which there is the risk of occurring in the cleaning step are prevented by performing the cleaning step during, before or after a step that includes chemical mechanical polishing (CMP) for forming the above wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.