Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility

US7053400B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Sey-Ping Sun · Austin, US
• David E. Brown · Pleasant Valley, US

Key dates

• Filing date: May 5, 2004
• Grant date: May 30, 2006
• Expiry date: May 15, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

The carrier mobility in transistor channel regions of Si—Ge devices is increased by employing a stressed liner. Embodiments include applying a high compressive or tensile stressed film overlying relaxed source/drain regions. Other embodiments include applying a high compressively or high tensilely stressed film, after post silicide spacer removal, over gate electrodes and strained Si source/drain regions of P-channel or N-channel transistors, respectively.