Method for treating semiconductor processing components and components formed thereby
US7053411B2 · kind B2 · utility
3Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | May 22, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.