Semiconductor device and method of manufacturing semiconductor device
US7053455B2 · kind B2 · utility
2Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | Feb 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.