Semiconductor device and method for controlling the same
US7054204B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2004 |
| Grant date | May 30, 2006 |
| Priority date | — |
| Expiry date | May 22, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/229
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are a semiconductor method and device which are capable of reducing data write errors by rewriting last write data during a write recovery time (tWR). The semiconductor device comprises a memory cell array consisting of a plurality of repetitive cell units; a bit line amplifier for amplifying a voltage difference between a bit line voltage and a complementary bit line voltage of the memory cell array; switching devices activated by a column selection line signal for electrically connecting a data line and a complementary data line to the bit line and the complementary bit line, respectively; and a write driver for supplying a write data voltage to the data line and the complementary data line, wherein the column selection line signal is generated during a write recovery time. The method for controlling the semiconductor device including a memory cell array having a plurality of repetitive cell units, a bit line amplifier for amplifying a voltage difference between a bit line voltage and a complementary bit line voltage of the memory cell array, switching devices activated by a column selection line signal for electrically connecting a data line and a complementary …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.