Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask
US7056627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Apr 15, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C17/3482
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a reflection type mask blank by forming a multilayer reflection film reflecting exposure light on a substrate and forming an absorber layer absorbing the exposure light on the multilayer reflection film includes a step of forming, between the substrate and the multilayer reflection film, a stress correction film opposite in direction to film stress of the multilayer reflection film and smaller in absolute value than the film stress of the multilayer reflection film, a step of heat-treating the stress correction film, and a step of heat-treating the multilayer reflection film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.