Etching metal silicides and germanides
US7056780B2 · kind B2 · utility
1Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Aug 5, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal silicide may be selectively etched by converting the metal silicide to a metal silicate. This may be done using oxidation. The metal silicate may then be removed, for example, by wet etching. A non-destructive low pH wet etchant may be utilized, in some embodiments, with high selectivity by dissolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.