Robert Turkot
13Patents
7h-index
15Co-inventors
59Inventor score
Filing activity: Nov 15, 2002 → Mar 30, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6812132B2 | Filling small dimension vias using supercritical carbon dioxide | Electricity | 38 | Expired |
| US6974764B2 | Method for making a semiconductor device having a metal gate electrode | Electricity | 22 | Expired |
| US7037845B2 | Selective etch process for making a semiconductor device having a high-k gate dielectric | Electricity | 17 | Expired |
| US7045428B2 | Method for making a semiconductor device with a high-k gate dielectric and a conductor that facilitates current flow across a P/N junction | Electricity | 12 | Expired |
| US7022655B2 | Highly polar cleans for removal of residues from semiconductor structures | Chemistry; Metallurgy | 10 | Expired |
| US6624127B1 | Highly polar cleans for removal of residues from semiconductor structures | Chemistry; Metallurgy | 9 | Expired |
| US7129182B2 | Method for etching a thin metal layer | Electricity | 9 | Expired |
| US7387927B2 | Reducing oxidation under a high K gate dielectric | Electricity | 6 | Expired |
| US7056780B2 | Etching metal silicides and germanides | Electricity | 1 | Expired |
| US7233068B2 | Filling small dimension vias using supercritical carbon dioxide | Electricity | 1 | Expired |
| US8017568B2 | Cleaning residues from semiconductor structures | Chemistry; Metallurgy | 0 | Active |
| US6896774B2 | Acoustic streaming of condensate during sputtered metal vapor deposition | Electricity | 0 | Expired |
| US11515402B2 | Microelectronic transistor source/drain formation using angled etching | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.