Solution composition for removing a remaining photoresist resin
US7056872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2002 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Jul 27, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises H2O as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because H2O is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.