CMOS image sensor and method of fabricating the same
US7057219B2 · kind B2 · utility
11Cited by
1References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 13, 2003 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Jun 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.