Transistor structures having access gates with narrowed central portions
US7057242B2 · kind B2 · utility
1Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2002 |
| Grant date | Jun 6, 2006 |
| Priority date | — |
| Expiry date | Oct 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit transistor includes an active region in a substrate, elongated along a first direction. A gate pattern is disposed on the substrate and crosses the active region along a second direction transverse to the first direction. The gate pattern includes an access gate portion disposed on the active region and narrowed at a central portion thereof. The gate pattern may further include a pass gate portion adjoining the access gate portion at the point beyond the edge of the active region, the pass gate portion having a lesser extent along the first direction than the access gate portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.